Synergistic Performance of MoS2/In0.53Ga0.47As Staggered Heterojunction for Broadband Optoelectronics

초록

MoS2, a 2D transition metal dichalcogenide, has received significant attention for next-generation electrical and optical devices due to its excellent optical and electrical properties, including high electron mobility and a direct bandgap. Beyond conventional 2D-based device architectures, the exploration of 2D and bulk (3D) heterojunctions has revealed unique electronic performance in 2D and structural stability in 3D. III-V semiconductors such as InGaxAs1-x have a direct bandgap with a broad tunability range (i.e., 0.35-1.4 eV), offering an ideal choice for optoelectronic applications. Herein, a type-II staggered heterojunction between p-type MoS2 and n-type In0.53Ga0.47As is demonstrated. The p-MoS2/n-In0.53Ga0.47As heterostructure shows the photoresponsivity in the wavelength range from 400 to 1700 nm with typical rectifying diode characteristics. These results highligh the potential of the p-MoS2/n-In0.53Ga0.47As heterostructure for high-performance devices, opening avenues for diverse applications.

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