Hole-induced polymerized interfacial film of polythiophene as cosensitizer and back-electron injection barrier layer in dye-sensitized TiO2 nanotube array

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초록

In this work, we demonstrate that an ultra-thin film of polythiophene deposited interfacially via hole-induced polymerization on the surface of dye-sensitized TiO2 nanotube array acts as co-sensitizer, and hinders back-electron transfer in a DSSC. Consequently, the dark current, and the recombination reactions can be suppressed, leading to an improved number of electron density at the TiO2 array electrode. Thus, an enhanced photocurrent, and power conversion efficiency of the device is achieved. This logical concept is experimentally justified, and the device, after polythiophene interfacial treatment, demonstrates an enhanced power conversion efficiency by the factor of 39.19%. (C) 2018 Elsevier B.V. All rights reserved.

키워드

Hole-induced polymerizationPolythiophene co-sensitizerInterfacial treatmentBack-electron injection barrierTiO2 nanotubesDSSCSOLAR-CELLSPERFORMANCEEFFICIENCYOXIDETIN
제목
Hole-induced polymerized interfacial film of polythiophene as cosensitizer and back-electron injection barrier layer in dye-sensitized TiO2 nanotube array
저자
Shrestha, Nabeen K.Yoon, Seog JoonBathula, ChinnaOpoku, HenryNoh, Yong-Young
DOI
10.1016/j.jallcom.2018.12.048
발행일
2019-04-15
유형
Article
저널명
Journal of Alloys and Compounds
781
페이지
589 ~ 594