Electrical Properties of Silicon-Oxide-Based Memristors on Silicon-on-Insulator Substrates

초록

Memristors attract the considerable interest of researchers and engineers due to the prospects for creating new information and computing systems on their basis. First of all, this refers to memristive devices based on the resistive switching (RS) effect, which, in most cases, are fabricated in the form of metal-insulator-metal structures. At the same time, the requirement for compatibility with the basic technological process of manufacturing complementary metal-oxide-semiconductor (CMOS) structures makes it very attractive to fabricate memristive devices directly on a silicon substrate or a silicon-on-insulator (SOI) substrate using standard insulator layers such as silicon oxide. The electrical characteristics and RS of memristors based on SiOx thin films formed on SOI substrates are studied. The memristors under study do not require electroforming. For the first time, the possibility of improving the parameters of the resistive switching of SiOx-based memristors on SOI substrates using laser and heat treatments is shown.

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