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초록

In this study, a highly rectifying memristor composed of a Pt/TaOx/TiN stack, incorporating a complementary metal-oxide semiconductor-friendly metal oxide switching layer, is fabricated to assess its performance in a diverse range of applications. The memristor exhibits highly rectifying characteristics due to the Schottky barrier formed by the work function difference between the Pt and TiN electrodes. For a compliance current of 1 mA, the memristor displays volatile memory properties, attributed to the migration of oxygen ions within the TaOx layer. Leveraging this volatile behavior, synaptic functions—where changes in synaptic plasticity occur in response to incoming spikes—are emulated. Additionally, the complete functions of a biological nociceptor are demonstrated, including threshold, relaxation, no-adaptation, sensitization, and recovery. These highly dynamic functions of the memristor are then utilized to mimic neuronal firing with a synaptic array, Morse code implementation enabling data generation, and computing functions through cost-effective reservoir computing. The simplicity of the fabrication process and the broad range of functions implemented in a single memristor make the Pt/TaOx/TiN device a promising candidate for future applications. © 2025 Wiley-VCH GmbH.

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