CMOS-Compatible AlScN Memristor on Silicon Exhibiting Short-Term Memory for Reservoir Computing

초록

We report a CMOS-compatible ferroelectric memristor based on a TiN/AlScN/n+ Si metal ferroelectric semiconductor (MFS) structure, fabricated entirely via low-temperature sputtering processes. The ultrathin AlScN film exhibits robust ferroelectricity with a high remanent polarization (2Pr approximate to 80.91 mu C/cm2) and excellent endurance over 105 cycles, while maintaining uniform switching across cells. Notably, the use of a heavily doped silicon bottom electrode enables full compatibility with conventional back-end-of-line (BEOL) CMOS processes and facilitates integration with silicon-based circuits. Beyond stable memory performance, the device demonstrates volatile short-term memory (STM) behavior originating from depolarization field-induced polarization relaxation, which is essential for neuromorphic dynamics. Leveraging this STM feature, the device was implemented as a physical reservoir in a reservoir computing (RC) framework, achieving 97.64% classification accuracy on the MNIST dataset using temporally coded inputs. These results highlight the potential of AlScN-based ferroelectric memristors as dynamic CMOS-compatible building blocks for in-memory and neuromorphic computing.

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