ScholarWorks@동국대학교

초록

Two-dimensional (2D) materials possess exceptional optical and electronic properties, such as high carrier mobility, strong light-matter interaction, and tunable bandgaps, offering promising opportunities for nextgeneration device technologies. However, the simultaneous realization of n-type and p-type conduction in a single 2D material remains a key challenge, as it is essential for creating complementary logic circuits and enabling the full potential of 2D material-based integrated circuits. In this study, we present a highly selective electrical-optical hybrid doping technique for tungsten diselenide (WSe2), enabling permanent modulation of its conduction type from intrinsic p-type to n-type. This transformation occurs when photoexcited electrons from defect states (color centers) in hexagonal boron nitride (h-BN) are transferred under an applied bias. The doping process can be precisely tuned by varying parameters such as light wavelength, exposure time, and power density to meet specific device requirements. Meanwhile, spatial selectivity achieved through patterned local gate electrodes allows for the integration of complex circuit architectures, with resolution limited only by photolithographic precision. Experimental results demonstrate robust long-term stability, reusability, and consistent performance across different WSe2 thicknesses. By addressing the limitations of traditional doping methods, this scalable and reconfigurable approach enables precise control and design flexibility, opening new pathways for advanced 2D material-based electronics.

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