Surface induced charge transfer in CuxIn2-xS3 nanostructures and their enhanced photoelectronic and photocatalytic performance

초록

Multi-functional semiconducting nanostructures are gaining popularity for application in photoelectronics, energy storage devices and also in industrial and environmental remediation functions. In this regard, CuxIn2-xS3 nanostructures were investigated in detail for their photoelectrical and photocatalytic performance. Their physico-chemical characteristics were at first studied using X-ray diffraction, Raman, UV-vis absorbance, X-ray photoelectron spectroscopy and high resolution electron microscopic tools. CuxIn2-xS3 based flip chip Schottky diodes were demonstrated to attest their improved conductivity and enhanced photoelectrical performance. The photo switching capabilities of a type II p-n CdTe/CuxIn2-xS3 heterojunction was also investigated. In both the device configurations, the current-voltage (I-V) characteristics revealed the forward current and rectification ratio to improve under lower threshold voltages. The time-dependent photoresponse characteristics affirmed the stability of diodes, augmenting the improved/effective separation of photo generated electron hole pairs under illumination. Additionally, the photocatalytic performances of CuxIn2-xS3 nanostructures were inferred under visible light conditions through effective remediation of methylene blue (MB) dye molecules. The obtained results infer the Cu interaction in tetragonal lattice of CuxIn2-xS3 to promote the surface induced charge transfer mechanism in respective nanostructures, thereby enhancing their photoelectronic and photocatalytic functionalities.

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