Versatile NbOx-Based Volatile Memristor for Artificial Intelligent Applications

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초록

To achieve cost-effectiveness, researchers are exploring various memristors for their adaptation in neuromorphic computing. Recent studies have focused on developing versatile functioning singular memristors, such as those involved in on-receptor computing, which integrates sensory functions into current neuromorphic computing paradigms. Additionally, adaptations like reservoir computing are being investigated for computing systems. In this study, a memristor composed of a stack of Ti/NbOx/Pt layers is fabricated to explore multifunctional behaviors within a single memristor. By applying bias toward the top Ti electrode, gradual current changes with volatile features are demonstrated, revealing an ion-migration-based nonfilamentary switching memristor. Leveraging this volatile functionality, an artificial nociceptor is first implemented, demonstrating key functions of biological nociceptors including thresholding, relaxation, no-adaptation, and sensitization. Subsequently, synapse emulation akin to the biological brain is achieved through easy conductance potentiation and depression with diverse synapse functions, enabling the memristor to mimic learning activities with spike firing. Lastly, computational applications are explored by adapting edge computing and multi-bit reservoir computing, expanding the memristor's applications across diverse fields with versatile behaviors. This study investigates the adaptation of multifunctional behaviors within a single memristor to enhance its effectiveness for future applications. By utilizing the uniform analog gradual switching functions of the Ti/NbOx/Pt memristor, it demonstrates the implementation of artificial synapses and nociceptors, emulation of synapse firing, synapse arrays, Pavlovian associative learning, and edge and reservoir computing within a single device. image

키워드

artificial synapseassociative conditioningneuromorphic computingniobium oxidevolatile memristorNOCICEPTORS
제목
Versatile NbOx-Based Volatile Memristor for Artificial Intelligent Applications
저자
Ju, DongyeolKim, Sungjun
DOI
10.1002/adfm.202409436
발행일
2024-12
유형
Article
저널명
Advanced Materials for Optics and Electronics
34
49