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초록
InCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved.
키워드
Photoluminescence; Cr-implantation; P-type InCrP:Zn; SEMICONDUCTORS; INP; GAAS; MN
- 제목
- New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr
- 저자
- Shon, Yoon; Lee, J. W.; Lee, D. J.; Yoon, I. T.; Kwon, Y. H.; Kim, H. S.; Kang, T. W.; Kyhm, J. H.; Song, J. D.; Koo, H. C.; Fu, D. J.; Park, C. S.; An, H. H.; Yoon, Chong S.; Kim, E. K.
- 발행일
- 2014-10
- 유형
- Article
- 권
- 154
- 페이지
- 593 ~ 596