Demonstration of the strontium oxide resistive memory with high OFF/ON resistance ratio and high reliability fabricated using a sol-gel process

초록

This work demonstrates the implementation of SrOx as a resistive switching (RS) layer material in memory devices. An Ag/SrOx/n+-Si write-once-read-many-times (WORM) memory is developed via a rapid and cost-effective sol-gel process. Moreover, the effects of annealing temperature on the SrOx film properties and memory characteristics are systematically investigated. The SrOx film annealed at 300 degrees C possesses the lowest oxygen vacancy concentration and an optimized thickness of similar to 30 nm, which effectively suppresses OFF-state current and enables a high ROFF/RON ratio of 106. Furthermore, the device exhibits reliable data retention and read-disturb immunity for over 104 s at both room temperature and 85 degrees C, with an extrapolated lifetime exceeding 10 years. Notably, a fast write speed of 50-60 ns is achieved. Temperature-dependent resistance analysis and different voltage scanning methods are employed to verify that the write process is dominated by metal filament. The physical mechanisms for resistance switching, performance variations induced by the annealing process, and carrier conduction behaviors are explored. The related energy band diagrams are also depicted.

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