Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

Kwon, Young H.; Lee, Sejoon; Yang, Woochul; Park, Chang-Soo; Yoon, Im Taek

doi:10.1007/s11664-016-5036-x

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Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

Kwon, Young H.;
Lee, Sejoon;
Yang, Woochul;
Park, Chang-Soo;
Yoon, Im Taek

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2

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1

초록

The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.

키워드

Quantum wells; ferromagnetism; clusters; molecular beam epitaxy; MAGNETOTRANSPORT PROPERTIES; MAGNETIC-PROPERTIES; CURIE-TEMPERATURE; TRANSPORT

제목: Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

저자: Kwon, Young H.; Lee, Sejoon; Yang, Woochul; Park, Chang-Soo; Yoon, Im Taek

DOI: 10.1007/s11664-016-5036-x

발행일: 2017-07

유형: Article

저널명: Journal of Electronic Materials

권: 46

호: 7

페이지: 3917 ~ 3921