Optoelectronic Resistive Switching Memory Enabled by a Zero-dimensional Manganese(II) Hybrid Complex

초록

Lead-free organic-inorganic hybrid metal halide compounds are emerging as promising alternatives to conventional lead-based materials for optoelectronic applications. However, their implementation in non-volatile memory devices remains largely unexplored. Herein, we report a luminescent resistive random-access memory (RRAM) device based on a zero-dimensional (0D) manganese(II) hybrid complex, (PTP)2MnBr4 (PTP = 2-propenyltriphenylphosphonium), synthesized via a mechanochemical route and integrated into solution-processed thin-film devices. The Ag/PMMA/(PTP)2MnBr4/ITO memory device exhibits stable bipolar resistive switching (RS) with a high ON/OFF ratio exceeding 106, reliable endurance over 350 switching cycles, and data retention longer than 4 103 s. Electrical transport analysis reveals that the RS behaviour originates from the formation and rupture of cooperative conductive filaments consisting of bromide-vacancy pathways and Ag-related metallic conduction channels, exhibiting space-charge-limited conduction in the high-resistance state and Ohmic conduction in the low-resistance state. Furthermore, ultraviolet illumination significantly reduces both SET and RESET voltages by promoting photoinduced carrier generation and ion migration within the Mn(II) hybrid layer, enabling light-assisted switching at reduced electrical bias. The memory functionality is also maintained on a flexible substrate under mechanical bending, demonstrating excellent mechanical robustness. These results highlight 0D Mn(II) hybrid complexes as promising lead-free materials for multifunctional, light-responsive, and flexible photonic devices.

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