Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework

Lee, Ah Rahm; Bae, Yoon Cheol; Baek, Gwang Ho; Chung, Je Bock; Kang, Tae Sung; Lee, Jong Sun; Park, Jea-Gun; Im, Hyun Sik; Hong, Jin Pyo

doi:10.1063/1.4828561

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Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework

Lee, Ah Rahm;
Bae, Yoon Cheol;
Baek, Gwang Ho;
Chung, Je Bock;
Kang, Tae Sung;
외 4명

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초록

We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5-x/TiOxNy and Pt/Ta2O5-x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical "CW set" process enables the SD transition to a counterclockwise direction. It thereby emphasizes the occurrence of a highly stable secondary bipolar resistive switching curve. The origin of two different switching modes is described by adapting a bias-dependent oxygen ion accumulation and depletion process at TiOxNy and TiN electrode interfaces and by performing various structural analyses. (C) 2013 AIP Publishing LLC.

키워드

RESISTIVE SWITCHING MEMORIES; THIN-FILMS; DEPOSITION; MECHANISM; DEVICES; LAYER

제목: Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework

저자: Lee, Ah Rahm; Bae, Yoon Cheol; Baek, Gwang Ho; Chung, Je Bock; Kang, Tae Sung; Lee, Jong Sun; Park, Jea-Gun; Im, Hyun Sik; Hong, Jin Pyo

DOI: 10.1063/1.4828561

발행일: 2013-10-28

유형: Article

저널명: Applied Physics Letters

권: 103

호: 18