Design of a High Speed CMOS Image Sensor with a Hybrid Single-Slope Column ADC and a Finite State Machine

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초록

In this paper, design of a CMOS Image sensor (CIS) with a hybrid single-slope ADC is presented. To obtain a small size and a high conversion rate CIS, no sampling capacitor structure is employed. This is implemented with a DC reference voltage and a single ramp generator. Further, by changing the input node of comparator, it reduces gain errors generated by a conventional 4-input comparator's differentia pair. The proposed hybrid ADC selects the resistor DAC's reference voltage controlled by a Finite State Machine(FSM), and converts the residual voltage with the single slope technique. Based on 1-Poly 5-Metal 90nm back side illuminated(BSI) CIS process, the chip satisfies 1920 x 1440 pixel resolution whose pitch is 1.4um and 1.75-Tr active pixel sensor(APS).

키워드

CMOS image sensorhybrid single-slope column ADCsampling capacitorsingle ramp generator4-input comparatorfinite state machine
제목
Design of a High Speed CMOS Image Sensor with a Hybrid Single-Slope Column ADC and a Finite State Machine
저자
Park, KeunyeolJin, MinhyunKim, Soo YounSong, Minkyu
DOI
10.1109/ISOCC.2017.8368786
발행일
2018-05-29
유형
Proceedings Paper
저널명
PROCEEDINGS INTERNATIONAL SOC DESIGN CONFERENCE 2017 (ISOCC 2017)
페이지
95 ~ 96