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초록

We report the development of a self-powered broadband photodetector based on a vertically stacked type-I isotype MoS<inf>2</inf>/InSe heterojunction, fabricated by transferring chemical vapor deposition-grown monolayer MoS<inf>2</inf> onto exfoliated InSe. The resulting n − n heterostructure forms a unilateral depletion region and establishes a favorable type-I band alignment that enables efficient charge carrier separation and suppresses dark current. Benefiting from the synergistic integration of broadband optical absorption and efficient carrier dynamics at the interface, the MoS<inf>2</inf>/InSe heterojunction photodetector demonstrates excellent performance across a broad spectral range from ultraviolet to near-infrared. Under 365 nm illumination at a reverse bias of –5 V, the device achieves a responsivity of 936.8 A/W, a specific detectivity of 9.67 × 10 ¹ ² Jones, and an external quantum efficiency (EQE) of 3186.8 %, along with excellent stability and reproducibility. Particularly, under zero bias, the device supports self-powered operation, achieving a responsivity of 26.8 A/W, a detectivity of 2.63 × 1011 Jones, and an EQE of 91.4 %. Spatially resolved photocurrent mapping reveals a localized photoresponse within the junction region, highlighting the influence of the built-in electric field induced by the type-I isotype band alignment. These findings underscore that the potential of the MoS₂/InSe heterostructure as a promising platform for next-generation broadband photodetectors with high sensitivity and wide spectral response. © 2025 Elsevier B.V.

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