Polypyridinophane thin films via CVD for a polymeric dielectric layer on an oxide TFT with an ultrahigh dielectric constant

Park, Won Kyung; Park, Jae Won; Lee, Gunoh; Jang, SeongCheol; Kim, Hyun-Suk; Lee, Kyung Jin

doi:10.1039/d6nh00093b

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Polypyridinophane thin films via CVD for a polymeric dielectric layer on an oxide TFT with an ultrahigh dielectric constant

Park, Won Kyung;
Park, Jae Won;
Lee, Gunoh;
Jang, SeongCheol;
Kim, Hyun-Suk;
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초록

High-k polymer gate dielectrics are desirable for oxide thin-film transistors but limited by low capacitance and interfacial instability. Pyridinophane-based polymers with main-chain heteroatoms were processed via a Gorham-type chemical vapor polymerization to form ultrathin, pinhole-free dielectrics with enhanced dielectric properties and reliable oxide transistor performance.

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제목: Polypyridinophane thin films via CVD for a polymeric dielectric layer on an oxide TFT with an ultrahigh dielectric constant

저자: Park, Won Kyung; Park, Jae Won; Lee, Gunoh; Jang, SeongCheol; Kim, Hyun-Suk; Lee, Kyung Jin

DOI: 10.1039/d6nh00093b

발행일: 2026-05

유형: Article; Early Access

저널명: Nanoscale horizons