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초록
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 10(4). The device also showed an endurance of > 10(9) cycles and a retention time of > 10(4) s at 85 degrees C. The temperature-dependent studies of ON/OFF states show that metallic conduction is responsible for ON state, whereas semiconducting or insulating behaviors are clearly observed from OFF-state devices. These results show that ZrN-based RSM can be used as a promising RSM device.
키워드
Atomic force microscopy (AFM); resistive switching (RS); SCLC; ZrN
- 제목
- Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells
- 저자
- Kim, Hee-Dong; An, Ho-Myoung; Sung, Yun Mo; Im, Hyunsik; Kim, Tae Geun
- 발행일
- 2013-03
- 유형
- Article
- 권
- 13
- 호
- 1
- 페이지
- 252 ~ 257