Worst Case Sampling Method with Confidence Ellipse for Estimating the Impact of Random Variation on Static Random Access Memory (SRAM)

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초록

As semiconductor devices are being scaled down, random variation becomes a critical issue, especially in the case of static random access memory (SRAM). Thus, there is an urgent need for statistical methodologies to analyze the impact of random variations on the SRAM. In this paper, we propose a novel sampling method based on the concept of a confidence ellipse. Results show that the proposed method estimates the SRAM margin metrics in high-sigma regimes more efficiently than the standard Monte Carlo (MC) method.

키워드

SRAMyieldrandom variationCMOS
제목
Worst Case Sampling Method with Confidence Ellipse for Estimating the Impact of Random Variation on Static Random Access Memory (SRAM)
저자
Oh, SangheonJo, JaesungLee, HyunjaeLee, Gyo SubPark, Jung-DongShin, Changhwan
DOI
10.5573/JSTS.2015.15.3.374
발행일
2015-06
유형
Article
저널명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
15
3
페이지
374 ~ 380