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SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems
- Park, Hyogeun;
- Kim, Sungjun
WEB OF SCIENCE
6SCOPUS
5초록
In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning. The optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure integrated both synaptic and nociceptor functionalities, with Pavlovian conditioning examined.
키워드
- 제목
- SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems
- 저자
- Park, Hyogeun; Kim, Sungjun
- 발행일
- 2024-10
- 유형
- Article
- 권
- 12
- 호
- 40
- 페이지
- 16551 ~ 16559
- 언어
- ENG
- 출판사
- Royal Society of Chemistry
- 발행국가
- 영국
- 분량
- 9 페이지
- ISSN
- E 2050-7534
P 2050-7526