SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems

Citations

WEB OF SCIENCE

6
Citations

SCOPUS

5

초록

In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning. The optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure integrated both synaptic and nociceptor functionalities, with Pavlovian conditioning examined.

키워드

Associative Processing; Associative Storage; 'current; Associative Learning; Bio-inspired Computing; Cognitive Computing Systems; Hyperalgesia; Learning Behavior; Light Exposure; Long-term Potentiations; Nociceptor; Short Term Memory; Optoelectronic Devices; SILICON-NITRIDE; PAIN; MECHANISMS; HYDROGEN
제목
SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems
저자
Park, Hyogeun; Kim, Sungjun
DOI
10.1039/d4tc02992e
발행일
2024-10
유형
Article
저널명
Journal of Materials Chemistry C
권
12
호
40
페이지
16551 ~ 16559