1T' RexMo1-xS2-2H MoS2 Lateral Heterojunction for Enhanced Hydrogen Evolution Reaction Performance

  • Nguyen, Huong Thi Thanh
  • Adofo, Laud Anim
  • Yang, Sang-Hyeok
  • Kim, Hyung-Jin
  • Choi, Soo Ho
  • ... Han, Young-Kyu
  • 외 7명
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초록

The imperfect interfaces between 2D transition metal dichalcogenides (TMDs) are suitable for boosting the hydrogen evolution reaction (HER) during water electrolysis. Here, the improved catalytic activity at the spatial heterojunction between 1T' RexMo1-xS2 and 2H MoS2 is reported. Atomic-scale electron microscopy confirms that the heterojunction is constructed by an in-situ two-step growth process through chemical vapor deposition. Electrochemical microcell measurements demonstrate that the 1T' RexMo1-xS2-2H MoS2 lateral heterojunction exhibits the best HER catalytic performance among all TMD catalysts with an overpotential of approximate to 84 mV at 10 mA cm(-2) current density and 58 mV dec(-1) Tafel slope. Kelvin probe force microscopy shows approximate to 40 meV as the work function difference between 2H MoS2 and 1T' RexMo1-xS2, facilitating the electron transfer from 2H MoS2 to 1T' RexMo1-xS2 at the heterojunction. First-principles calculations reveal that Mo-rich heterojunctions with high structural stability are formed, and the HER performance is improved with the combination of increased density of states near the Fermi level and optimal Delta G(H*) as low as 0.07 eV. Those synergetic effects with many electrons and active sites with optimal Delta G(H*) improve HER performance at the heterojunction. These results provide new insights into understanding the role of the heterojunction for HER.

키워드

first-principles calculationsheterophasehydrogen evolution reactionlateral heterostructurestransition metal dichalcogenidesGENERALIZED GRADIENT APPROXIMATIONRES2TRENDSFILMS
제목
1T' RexMo1-xS2-2H MoS2 Lateral Heterojunction for Enhanced Hydrogen Evolution Reaction Performance
저자
Nguyen, Huong Thi ThanhAdofo, Laud AnimYang, Sang-HyeokKim, Hyung-JinChoi, Soo HoKirubasankar, BalakrishnanCho, Byeong WookBen-Smith, AndrewKang, JoohoonKim, Young-MinKim, Soo MinHan, Young-KyuKim, Ki Kang
DOI
10.1002/adfm.202209572
발행일
2023-01
유형
Article
저널명
Advanced Materials for Optics and Electronics
33
3