Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

Lee, D. J.; Park, C. S.; Lee, Cheol Jin; Song, J. D.; Koo, H. C.; Yoon, Chong S.; Yoon, Im Taek; Kim, H. S.; Kang, T. W.; Shon, Yoon

doi:10.1016/j.cap.2014.01.017

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Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

Lee, D. J.;
Park, C. S.;
Lee, Cheol Jin;
Song, J. D.;
Koo, H. C.;
외 5명

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초록

The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase Tc (>300 K) by preventing MnO2. After milling 1-3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO2 is considered to originate from the increased p-d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process. (C) 2014 Elsevier B.V. All rights

키워드

p-type InP:Be/Mn/InP:Be triple layers; Increased T-c; MBE; NEUTRAL MANGANESE ACCEPTOR; INP; SEMICONDUCTORS

제목: Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

저자: Lee, D. J.; Park, C. S.; Lee, Cheol Jin; Song, J. D.; Koo, H. C.; Yoon, Chong S.; Yoon, Im Taek; Kim, H. S.; Kang, T. W.; Shon, Yoon

DOI: 10.1016/j.cap.2014.01.017

발행일: 2014-04

유형: Article

저널명: Current Applied Physics

권: 14

호: 4

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