상세 보기
- Kim, Ju Young;
- Han, Yoojoong;
- Nugera, Florence A.;
- Gutiérrez, Humberto R.;
- Kim, Un Jeong;
- 외 1명
WEB OF SCIENCE
0SCOPUS
0초록
Lateral MoS<inf>2</inf>–WS<inf>2</inf> heterostructures are essential for scalable in-plane optoelectronic junctions, yet their interfaces often show weak optical contrast that obscures their identification in bright-field microscopy. Raman and Photoluminescence (PL) mapping clearly resolves the junction through excitonic contrast, but its raster-scanning nature limits rapid, large-area inspection. Here, we show that hyperspectral phase microscopy (HPM) imaging provides a fast, wide-field indicator of weak contrast MoS<inf>2</inf>–WS<inf>2</inf> junctions. Direct comparison of PL and HPM acquired from the same regions reveals that the HPM phase shift retains a consistent spatial contrast across the heterointerface, enabling reliable interface localization comparable to PL. Line-profile and correlation analyses confirm that HPM captures the junction position with high reproducibility. These results establish phase-based imaging as a practical complement to PL for rapid visualization and process-level monitoring of lateral transition-metal dichalcogenides (TMDs) heterostructures. © 2026
키워드
- 제목
- Resonant optical phase imaging of lateral transition metal dichalcogenides heterostructure junctions with sub-micron width as high-throughput inspection
- 저자
- Kim, Ju Young; Han, Yoojoong; Nugera, Florence A.; Gutiérrez, Humberto R.; Kim, Un Jeong; Son, Hyungbin
- 발행일
- 2026-05
- 유형
- Article
- 권
- 85
- 페이지
- 111 ~ 117