Solution-processed NiOx nanoparticle additives for organic and hybrid perovskite transistors with synaptic functions

초록

Studies have explored innovative strategies for improving the charge-transport capacity and stability of perovskite transistors by incorporating organic materials through additive and interfacial engineering. Similarly, herein, we investigated the synaptic behaviors of organic and surface-capped methylammonium lead iodide (MAPbI(3)) transistors using electrolyte gating and solution-processed nickel oxide (NiOx) nanoparticle additives. X-ray photoelectron spectroscopy measurements revealed molecular interaction between MAPbI(3) and NiOx through partial substitution at the B-site and X-site of the perovskite. Ionic-gated poly(3-hexylthiophene) surface-capped perovskite transistors with optimized NiOx nanoparticle additives exhibited greater channel conductivity and more interface traps than the pristine device, with a hole mobility of similar to 23 cm(2) V-1 s(-1) and an on/off current ratio of >10(3). Organic and surface-capped perovskite transistors gated with 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide ionic liquid dielectric, with and without NiOx nanoparticle additives, effectively mimicked characteristic synaptic behaviors, including excitatory postsynaptic current, paired-pulse facilitation, long-term memory performance, and long-term potentiation and depression. The ionic-liquid-gated devices exhibited low energy consumption of 3-9 nJ during synaptic operation. Overall, this study provides an alternative route for investigating hybrid organic-perovskite semiconducting channels for synaptic device applications through electrolyte gating.

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