Halide-Based Ammonium Additives for High-Performance Organic Field-Effect Transistors

초록

The design and development of new organic semiconductors are essential for advancing organic electronic device applications. Despite remarkable efforts to improve charge transport and carrier mobility in organic field-effect transistors (OFETs), the performance of OFETs still lags far behind that of halide perovskite semiconductor counterparts. In this study, we investigated ammonium-based additives, including halide-based ammonium salts and organic cations, to enhance the performance of OFETs. Among the investigated additives, tetrabutylammonium chloride (TBACl) resulted in enhanced charge transport and device performance when incorporated into poly(3-hexylthiophene) OFETs. Specifically, the TBACl-based OFETs exhibited an optimized average field-effect mobility of 0.24 cm2 V-1 s-1 (best value approximate to 0.48 cm2 V-1 s-1), which was about 14% higher than that of the pristine counterpart (best value approximate to 0.34 cm2 V-1 s-1). These charge transport enhancements are due to improved film crystallinity, enhanced surface morphology, reduced interface traps, and chemical interactions between the chlorine ion in the TBACl additive and adjacent sulfur atoms in the thiophene units due to favorable electronegativity of the chlorine atom. Our findings suggest that the incorporation of halide-based ammonium salts as additives could enhance charge transport in OFETs and related electronic devices.

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