Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well

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초록

Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley. [GRAPHICS] .

키워드

Maximum-entropy mobility-spectrum analysis (MEMSA)Full maximum-entropy mobility-spectrum analysis (FMEMSA)Mobility-spectrum analysis (MSA)Hall effectAnisotropic single valleyELECTRONSHOLES
제목
Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well
저자
Joung, HodougAhn, Il-HoYang, WoochulKim, Deuk Young
DOI
10.1007/s13391-018-0081-7
발행일
2018-11
유형
Article
저널명
Electronic Materials Letters
14
6
페이지
774 ~ 783