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초록

In this study, we analyze the characteristics of fast transient drain current (I D) in IGZO-based field-effect transistors (FETs) with different composition ratios (device O: ratio of 1:1:1 for In, Ga, Zn, device G: ratio of 0.307:0.39:0.303) for reliable operations. Overshoot currents, which can cause device degradation, are caused by fast transients and are attributed to the trapping of electrons in the energy band. As the lateral electric field (E lat) of the IGZO channel is increased, the overshoot drain current difference (Delta I OS) is increased for both devices. It is also found that the increase in Delta I OS with decreasing L is less pronounced in device G compared with that for device O. While device G yields larger Delta I OS values than device O in long channels (L = 5, 10 mu m), it yields smaller Delta I OS in short channels (L = 0.5, 1 mu m). This phenomenon is explained using three physical parameters (n OS, E ver, and N OT), based on Technology Computer-Aided Design (TCAD) simulation modeling. Device G has stronger immunity against Delta I OS in a short-channel region; this can be attributed to the lower concentration of oxygen vacancies in device G that suppresses dopant diffusion effects within IGZO layer. These results experimentally demonstrate that the short-channel effects on fast-transient I D can be improved by controlling the Ga composition ratio of IGZO.

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