Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1%

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초록

This work reports on designing of first successful MOFsensitizer based solid-state photovoltaic device, perticularly with a meaningful output power conversion efficiency. In this study, an intrinsically conductive cobalt-based MOFs (Co-DAPV) formed by the coordination between Co (II) ions and a redox active di(3-diaminopropyl)-viologen (i.e., DAPV) ligand is investigated as sensitizer. Hall-effect measurement shows p-type conductivity of the Co-DAPV film with hole mobility of 0.017 cm(2) V-1 s(-1), suggesting its potential application as hole transporting sensitizer. Further, the energy levels of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of Co-DAPV are well-matched to be suitably employed for sensitizing TiO2. Thus, by layer-by-layer deposition of hole conducting MOF-sensitizer onto mesoporous TiO2 film, a power conversion efficiency of as high as 2.1% is achieved, which exceeds the highest efficiency values of MOF-sensitized liquid-junction solar cells reported so far.

키워드

metal-organic-frameworkssensitizerhole conductorsolid-statesolar cellMETAL-ORGANIC-FRAMEWORKSTHIN-FILMSUPERCAPACITORSPROPERTY
제목
Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1%
저자
Ahn, Do YoungLee, Deok YeonShin, Chan YongBui, Hoa ThiShrestha, Nabeen K.Giebeler, LarsNoh, Yong-YoungHan, Sung-Hwan
DOI
10.1021/acsami.7b03487
발행일
2017-04-19
유형
Article
저널명
ACS Applied Materials & Interfaces
9
15
페이지
12930 ~ 12935