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Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping
- Sung, T.;
- Park, K.;
- Kim, J.H.;
- Park, H.-W.;
- Yun, P.;
- ... Chung, K.-B.;
- 외 7명
Citations
SCOPUS
0초록
Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment. © 2018 International Display Workshops. All rights reserved.
키워드
IGZO; Nitrogen; Reliability
- 제목
- Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping
- 저자
- Sung, T.; Park, K.; Kim, J.H.; Park, H.-W.; Yun, P.; Non, J.; Lee, S.; Park, K.-S.; Yoon, S.; Kang, I.; Chung, K.-B.; Kim, H.-S.; Kwon, J.-Y.
- 발행일
- 2018
- 유형
- Conference Paper
- 저널명
- Proceedings of the International Display Workshops
- 권
- 1
- 페이지
- 287 ~ 290
- 언어
- ENG
- 출판사
- International Display Workshops
- 분량
- 4 페이지
- ISSN
- P 1883-2490