Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Sung, T.; Park, K.; Kim, J.H.; Park, H.-W.; Yun, P.; Non, J.; Lee, S.; Park, K.-S.; Yoon, S.; Kang, I.; Chung, K.-B.; Kim, H.-S.; Kwon, J.-Y.

상세 보기

Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Sung, T.;
Park, K.;
Kim, J.H.;
Park, H.-W.;
Yun, P.;
... Chung, K.-B.;
외 7명

Citations

SCOPUS

0

초록

Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment. © 2018 International Display Workshops. All rights reserved.

키워드

IGZO; Nitrogen; Reliability

제목: Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

저자: Sung, T.; Park, K.; Kim, J.H.; Park, H.-W.; Yun, P.; Non, J.; Lee, S.; Park, K.-S.; Yoon, S.; Kang, I.; Chung, K.-B.; Kim, H.-S.; Kwon, J.-Y.

발행일: 2018

유형: Conference Paper

저널명: Proceedings of the International Display Workshops

권: 1

페이지: 287 ~ 290