ScholarWorks@동국대학교

초록

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for their optical and gas-sensing applications due to their exceptional sensitivity. Reliable selectivity and low power consumption are two major requirements for photodetector and gas sensor applications in next-generation electronic devices and the Internet of Things. Self-powered sensors (especially photovoltaic gas sensors) can solve these problems. In this study, for the first time, we report 2D TMDs (NbSe2-MoS2 hybrid) on a SiO2/Si substrate to fabricate photovoltaic self-powered gas sensors. The gas sensors are operated by the photovoltaic effect of the NbSe2-MoS2 nanostructure, which is prepared using the liquid phase exfoliation process. Initially, it was revealed that the present hybrid material exhibits photovoltaic properties under light illumination, with a circuit current of 0.25 µA and a circuit voltage of 34 mV. The NbSe2-MoS2 nanostructure characteristics were then used for NH3 gas sensing at different concentrations, and the gas sensing response was detected from low (8.8 % at 10 ppm) to high (28.8 % at 500 ppm) concentrations. The built-in electric field occurred between the NbSe2-MoS2 junction and eventually operated as a driving force for NbSe2-MoS2 gas sensing without an external bias voltage. The physisorption of gas molecules on their surface prompts a charge-transfer mechanism that improves the gas sensor response. The combined outcome of NbSe2-MoS2 heterostructures could pave way to next-generation gas sensing device fabrications. © 2024 Elsevier B.V.

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