Simulation of sub-0.1um T-gate Trilayer Process in HEMTs for Millimeter-Qave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System

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제목: Simulation of sub-0.1um T-gate Trilayer Process in HEMTs for Millimeter-Qave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System