ScholarWorks@동국대학교

초록

In the past few years, perovskite-based research has made great advancements through its active role in the electronics industry. However, the defects in perovskite films caused by uncontrollable crystallization and the brittle ionic compounds cause deterioration in the efficiency and robustness of the resulting devices. In this study, an attempt was made to produce the Cs(0.1)MA(0.9)PbI(3) perovskite and its transition metal sulfide hybrids (VS2-XS2, X = Mo or W) with an altered configuration to realize enhanced device characteristics of perovskite based ultraviolet (UV)-visible and X-ray photodetectors. A maximum photoresponsivity of 73.1 A W-1, detectivity of 4.55 x 10(12) Jones, and normalized photocurrent-to-dark current ratio (NPDR) of 1.81 x 10(10) W-1 at 1179 mu W cm(-2) under UV lighting were exhibited by the photodetector comprising the VW2 VS2-WS2 doped perovskite layer. Furthermore, an X-ray detector with a Cs(0.1)MA(0.9)PbI(3)-VW2 layer attained a sensitivity and CCD-DCD of 3.66 mA Gy(-1) cm(-2) and 12.22 mu A cm(-2), respectively. This work provides a new roadmap to fabricate the metal sulfide hybrid-tuned perovskite structures for achieving instant charge extraction and desirable electron/hole transport behaviors to fabricate highly sensitive semiconductor devices.

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