A 260-300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process
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초록

We report a 280-GHz mixer-first quadrature receiver in 130-nm SiGe that achieves a peak gain of 25 dB, an IF bandwidth of 30-GHz, and a minimum single-sideband (SSB) noise figure (NF) of 18.2 dB. The receiver is comprised of two Gilbert-cell mixers with swapped RF and local oscillation (LO) ports that downconvert the RF signal at 260-299 GHz to I/Q IF signals at 1-40 GHz by using a pseudo-differential LO driver at 259 GHz. In each channel, a wideband IF amplifier was used for an aimed conversion gain of higher than 20 dB. Combined with a differentia hybrid coupler, an integrated 259-GHz driving amplifier (DA) was integrated to generate the quadrature LO signals for I and Q channels. The measured amplitude and phase imbalance between the I and Q channels are around 4 dB and 4 degrees, respectively. The fabricated chip occupies a whole area of 1.12 mm(2) and consumes a dc power of 384 mW.

키워드

IQ receiverSiGesub-terahertz (THz) amplifierTRANSMITTERBICMOSSYSTEMSPOWER
제목
A 260-300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process
저자
Van-Son TrinhSong, Jeong-MoonPark, Jung-Dong
DOI
10.1109/LMWT.2022.3228646
발행일
2023-04
유형
Article
저널명
IEEE Microwave and Wireless Technology Letters
33
4
페이지
435 ~ 438