상세 보기
Normally-off AlGaN/GaN HEMT with high breakdown voltage using recessed T-gate drain-field-plate (TGDFP) technology for RF power applications
- 제목
- Normally-off AlGaN/GaN HEMT with high breakdown voltage using recessed T-gate drain-field-plate (TGDFP) technology for RF power applications
- 저자
- 박현창
- 발행일
- 2013-07-10
- 학회명
- NANO KOREA 2013
- 개최지
- Coex
- 학회 개최일
- 2013-07-10 ~ 2013-07-12