Microstructure, Photoluminescence and Electrical Properties of SmxGd(1-x): SrO Hybrid Nanomaterials Synthesized via Facile Coprecipitation Method

초록

The development of triple oxide semiconductor nanostructures (NS) with special optical window is critical for the optoelectronicsand the luminescent industry. The present article describes the synthesis of Sm x :Gd (1−x) @SrO (x = 0.4, 0.6, 0.8)NS by simple Coprecipitation method. The NS were characterized by X-ray powder diff raction (XRD), scanning electronmicroscopy (SEM), SEM–EDS (energy dispersive spectra), Fourier transform infrared (FT-IR), UV–visible, X-ray photoelectronspectroscopy (XPS), and Brunauer–Emmett–Teller analytical methods. The results of the powdered XRD patternrevealed the formation of mixed-phase of hexagonal crystal structure, with grain size between 62 and 78 nm. Redshift inoptical absorption spectra for the Sm 3+ doped Gd (1−x) SrO NS appeared when compared to Gd (1−x) SrO NS. Photoluminescence(PL) spectroscopy demonstrated broad deep defect levels in Sm x : Gd (1−x) SrO NS when compared to Gd (1−x) SrONS. PL studies of Gd 0.6 , SrO exhibited three emission peaks detected at 373.6 nm, 382.1 nm, and 392.7 nm when excited at325 nm. PL studies of Sm x : Gd (1−x) SrO NS (x = 0.8) showed four emission peaks appeared at 415 nm (violet), 472 nm (blue),532.1 nm (green) and 569.6 nm (yellow) due to f–f transition of Sm 3+ in 4f 5 confi guration. Higher values of dielectric constant(3.86 × 10 4 ), dielectric permittivity (10 3 –10 5 ) resulted for the Sm x :Gd (1−x) @SrO (x = 0.8) NS with negligibly small dielectricloss (< 0.03) when compared to Gd 0.6 SrO NS. The synthesised materials demonstrated excellent luminescence propertieswith good dielectric properties therefore these materials could be good candidates to be used as high-luminescent devices.

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