Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Yunusov, Z. A.; Yuldashev, Sh. U.; Kwon, Y. H.; Kim, D. Y.; Lee, S. J.; Jeon, H. C.; Jung, H.; Kim, A.; Kang, T. W.

doi:10.1016/j.jmmm.2017.09.043

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Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Yunusov, Z. A.;
Yuldashev, Sh. U.;
Kwon, Y. H.;
Kim, D. Y.;
Lee, S. J.;
... Jeon, H. C.;
... Jung, H.;
외 2명

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초록

In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn-1 xMnxO1 S-y(y) thin films with manganese x = 0.05 and sulfur 0 <= y <= 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration. (C) 2017 Elsevier B.V. All rights reserved.

키워드

Diluted magnetic semiconductors (DMS); ZnO; ZnS alloy; Room temperature ferromagnetism; OPTICAL-PROPERTIES; FERROMAGNETISM; ZN1-XCOXO

제목: Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

저자: Yunusov, Z. A.; Yuldashev, Sh. U.; Kwon, Y. H.; Kim, D. Y.; Lee, S. J.; Jeon, H. C.; Jung, H.; Kim, A.; Kang, T. W.

DOI: 10.1016/j.jmmm.2017.09.043

발행일: 2018-01-15

유형: Article

저널명: Journal of Magnetism and Magnetic Materials

권: 446

페이지: 206 ~ 209