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초록

To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiOx-buffered passivation structure compared to the conventional Si3N4 passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance-voltage (C-V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si3N4 passivation was in the range of 10(12)-10(13) cm(-2) eV(-1), which is one-order higher than that of the SOD (10(11)-10(12) cm(-2) eV(-1)) as measured by C-V measurements from the metal-insulator-semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si3N4 passivation. A well-resolved reduction of the electron Hall mobility of the Si3N4 passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. (C) 2015 Elsevier B.V. All rights reserved.

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