MoS2:PVA-based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing

초록

This letter presents a flexible Ag/MoS2:PVA/SiO2/Pt memristor featuring controllable transition between volatile self-rectifying threshold switching (SRTS) and non-volatile bipolar resistive switching dependent on compliance current (CC) and operating voltage. The device exhibits a high rectification ratio (∼ 103) and ultrafast relaxation (∼170 ns) time in SRTS mode, functioning as an effective selector. In non-volatile mode, it exhibits stable multi-level storage and persistence photoconductivity (PPC) under a red light source, enabling optoelectronic synaptic emulation. Integrated NeurosimV 3.0 hardware simulation reveals weight updates (NLP/D ≈ 4.21/ − 4.86) functionality and achieves 85% MNIST handwritten dataset classification accuracy. These results provide a robust, single-layer optoelectronic memristive hardware platform for integrated sensing, cell selection, and neuromorphic computing in flexible electronics. © 1980-2012 IEEE.

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