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초록

Fabrication and characterization of ZnO nanorod field effect transistor (FET) is reported. Back-gated ZnO nanowire FETs were fabricated on SiO2 covered p-type Si substrate using lithographically patterned Ti/Au contacts. The ZnO nanorods were synthesized by chemical bath deposition method using the precursors zinc nitrate hexahydrate (Zn (NO3)(2)center dot 6H(2)O) and hexamethylenetetramine (HMT) (C6H2N4). Fabricated FET has shown clear gate response. I-V characterization done on the fabricated FET has shown Coulomb blockade and plasmonic nanoantenna like effects. The observation of Coulomb blockade and plasmonic effect of the fabricated FET structure have been explained. (C) 2016 Elsevier GmbH. All rights reserved.

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