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초록

InAs exhibits high electron mobility, positioning it as a promising candidate for advanced nanoelectronic device materials. Specifically, nanowire structures are particularly advantageous for electronic device applications, offering benefits such as reduced leakage current and minimized short-channel effects due to their distinctive one-dimensional electron transport characteristics. However, the large surface-to-volume ratio of the nanowires not only significantly degrades their electrical properties but also complicates the formation of semiconductormetal ohmic contacts. In this study, surface treatments involving sulfur and (NH4)2S, along with rapid thermal annealing (RTA) processes, were applied to mitigate these disadvantages, resulting in a marked enhancement of the electrical properties of InAs nanowires. The electron mobility of the InAs nanowires was elevated from 83.06 cm2/V & sdot;s to 292.718 cm2/V & sdot;s through the application of passivation and RTA processes.

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