Photo-induced negative transconductance in WSe2 for multi-functional dual-input logic
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초록

Two-dimensional semiconductors have attracted considerable interest for compact optoelectronic devices, but the realization of reconfigurable Boolean logic within a single transistor remains limited. Here, we report dual-input reconfigurable logic based on light-induced anti-ambipolar transport in a back-gated WSe2 field-effect-transistor. Under a low drain bias, the device exhibits p-type-dominant transfer characteristics in the dark, while 638 nm illumination gives rise to a pronounced anti-ambipolar response with a current peak near zero gate bias above a threshold optical power density. This behavior defines a two-dimensional response map as a function of optical power density and gate voltage. By using these two variables as independent logic inputs and applying current thresholding, AND, OR, NAND, and NOR operations are achieved in a single device. Circuit-level feasibility is further supported by PSpice simulations based on the measured response maps. © 2026 Korean Physical Society

키워드

Dual-input logic gateLight-induced anti-ambipolar transportNegative transconductanceOptoelectronic reconfigurable logicWSe<sub>2</sub> field effect transistor
제목
Photo-induced negative transconductance in WSe2 for multi-functional dual-input logic
저자
Huh, JihoonNa, Kyeong TaeKim, Un JeongLee, Moonsang
DOI
10.1016/j.cap.2026.04.015
발행일
2026-08
유형
Article
저널명
Current Applied Physics
88
페이지
10 ~ 15