Electronic structure and origin of intrinsic defects in sputtered HfTiO2 alloy dielectric on GaAs surface

초록

In this work, we have investigated the electronic structure and electrical properties of sputter-deposited high-k dielectrics grown on p-GaAs substrate with post-deposition annealing at 500 degrees C/N-2 ambient. Capacitance-voltage results show that co-sputtered amorphous-HfTiO2 alloy dielectric can reduce inter-facial dangling bonds. HRTEM and AR-X-ray photoelectron spectroscopy results confirmed the formation of a thin interfacial layer during sputter deposition. At the atomistic level, the surface reaction and electronic interface structure were investigated by density-functional theory (DFT) calculations. Using the HSE functional, theoretical calculations of bulk HfO2, a-TiO2, and HfTiO2 band gaps are found to be 5.27, 2.61, and 4.03 eV, respectively. Consequently, in the HfTiO2/GaAs interface, the valance band offset is found to be reduced to 1.04 eV compared to HfO2/GaAs structure valance band offset of 1.45 eV. Reduction in border trap density (similar to 1011 V/ cm(2)) was observed due to Ti atoms bridging between As-dangling bonds. The angle-resolved XPS analysis further confirmed Ti-O-As chemical bonding with very thin (similar to 20 A) dielectric layers. (c) 2022 Elsevier B.V. All rights reserved.

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