Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells

  • Cho, Yuljae; 
  • Hou, Bo; 
  • Lim, Jongchul; 
  • Lee, Sanghyo; 
  • Pak, Sangyeon; 
  • ... Sohn, Jung Inn; 
  • 외 10명
Citations

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51
Citations

SCOPUS

49

초록

In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport.

키워드

CIRCUIT VOLTAGE DEFICIT; NANOCRYSTAL FILMS; PEROVSKITE; PHOTOVOLTAICS; ENERGY; CH3NH3PBI3; EFFICIENCY; SOLIDS; LIGAND; DIFFUSION
제목
Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells
저자
Cho, Yuljae; Hou, Bo; Lim, Jongchul; Lee, Sanghyo; Pak, Sangyeon; Hong, John; Giraud, Paul; Jang, A-Rang; Lee, Young-Woo; Lee, Juwon; Jang, Jae Eun; Snaith, Henry J.; Morris, Stephen M.; Sohn, Jung Inn; Cha, SeungNam; Kim, Jong Min
DOI
10.1021/acsenergylett.8b00130
발행일
2018-04
유형
Article
저널명
ACS ENERGY LETTERS
권
3
호
4
페이지
1036 ~ 1043