Design of a CMOS Image Sensor with Bi-Directional Gamma-Corrected Digital-Correlated Double Sampling
  • Cho, Jaehee
  • Choo, Hyunseon
  • Lee, Suhyeon
  • Yoon, Seungju
  • Kam, Gyuwon
  • ... Kim, Sooyoun
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초록

We present a 640 x 480 CMOS image sensor (CIS) with in-circuit bi-directional gamma correction with a proposed digital-correlated double sampling (CDS) structure. To operate the gamma correction in the CIS, the transfer function of the analog-to-digital converter can be changed by controlling the clock frequency of the counter using analog CDS. However, the analog CDS is vulnerable to capacitor mismatch, clock feedthrough, etc. Therefore, we propose a digital-CDS method with a hold-and-go counter structure to operate the bi-directional gamma correction in the CIS. The proposed CIS achieves a 10-bit resolution using a global log-exponential counter and configurable column reset counter with a resolution of 8/9 bits. The sensor was fabricated in a 0.11 mu m CIS process, and the full chip area was 5.9 mm x 5.24 mm. The measurement results showed a maximum SNR improvement of 10.41% with the proposed bi-directional gamma-corrected digital-CDS with the hold-and-go counter. The total power consumption was 6.3 mW at a rate of 16.6 frames per second with analog, pixel, and digital supply voltages of 3.3 V, 3.3 V, and 1.5 V, respectively.

키워드

CMOS image sensordynamic rangegamma correctionlog-exponential countersingle-slope analog-to-digital converterALGORITHM
제목
Design of a CMOS Image Sensor with Bi-Directional Gamma-Corrected Digital-Correlated Double Sampling
저자
Cho, JaeheeChoo, HyunseonLee, SuhyeonYoon, SeungjuKam, GyuwonKim, Sooyoun
DOI
10.3390/s23021031
발행일
2023-01
유형
Article
저널명
Sensors
23
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