PoZS: An Intelligent Resource Management and Data Placement Scheme for Next-generation Mobile NAND Solution

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초록

As mobile devices evolve to handle increasingly complex and I/O intensive applications, the demand for high-performance storage devices increases. To meet increasing demands, the zoned namespace (ZNS) interface has emerged as a promising alternative and is enabled on traditional UFS storage devices on mobile devices, called ZUFS. In this paper, we first explore emerging TLC-based ZUFS storage devices built on high-density TLC NAND cells due to the physical form-factor constraints of mobile devices. Then, we propose PoZS that enhances overall performance by utilizing the asymmetric bit performance of TLC NAND cells through vertical programming ordering (VPO) and classification of the physical zones within the TLC-based ZUFS into three groups, namely LSB-Z, CSB-Z, and MSB-Z. For evaluation, we implement PoZS in the NVMeVirt emulator by enabling the zoned namespace interface, and compare it with the baseline. To validate the robustness and effectiveness of PoZS, we conducted extensive evaluations across a broad spectrum of storage scenarios, including various mobile and server workloads. Experimental results clearly confirm that PoZS consistently outperforms baselines, achieving significant improvements in I/O throughput while substantially increasing LSB pages; it achieves a performance improvement of 117% in a real-world mobile workload. These findings show that PoZS is highly effective under high-density storage constraints and meets the performance demands of next-generation mobile devices. © 1975-2011 IEEE.

키워드

Mobile devicesTLC NAND cellszoned namespace (ZNS) interfaceZUFS storage devices
제목
PoZS: An Intelligent Resource Management and Data Placement Scheme for Next-generation Mobile NAND Solution
저자
Lee, ChanyongKang, Donghyun
DOI
10.1109/TCE.2026.3688695
발행일
2026
유형
Article in press
저널명
IEEE Transactions on Consumer Electronics