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Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device
- Jo, Yongcheol;
- Kim, Jongmin;
- Cho, Sangeun;
- Kim, Hyungsang;
- Im, Hyunsik
초록
Strongly correlated electron systems which induce strong electron-electron interaction at ultra-low temperatures have always been an intriguing topic in mesoscopic condensed matter physics. Below 130 mK, a peculiar gap can be found in Al/SiO2/Si:P structured tunnelling devices. The gap survives at the base temperature of more than 1800 gauss (30 mK), contrary to the superconductivity of the top Al electrode, which is completely suppressed above 100 gauss. This outcome implies that the observed gap is induced by Coulomb interaction in the heavily doped Si.
키워드
Coulomb interaction induced gap; Phosphorus doped silicon; Tunnelling device; METAL-INSULATOR-TRANSITION; DOPED SEMICONDUCTOR
- 제목
- Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device
- 저자
- Jo, Yongcheol; Kim, Jongmin; Cho, Sangeun; Kim, Hyungsang; Im, Hyunsik
- 발행일
- 2017-05
- 유형
- Article
- 저널명
- 한국진공학회지
- 권
- 26
- 호
- 3
- 페이지
- 50 ~ 51