Volatile tin oxide memristor for neuromorphic computing

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초록

The rise of neuromorphic systems has addressed the shortcomings of current computing architectures, especially regarding energy efficiency and scalability. These systems use cutting-edge technologies such as Pt/SnOx/TiN x /TiN memristors, which efficiently mimic synaptic behavior and provide potential solutions to modern computing challenges. Moreover, their unipolar resistive switching ability enables precise modulation of the synaptic weights, facilitating energy-efficient parallel processing that is similar to biological synapses. Additionally, memristors' spike-rate-dependent plasticity enhances the adaptability of neural circuits, offering promising applications in intelligent computing. Integrating memristors into edge computing architectures further highlights their importance in tackling the security and efficiency issues associated with conventional cloud computing models.

키워드

Applied computing; Engineering; SYNAPTIC PLASTICITY; MEMORY MATERIALS; MECHANISMS
제목
Volatile tin oxide memristor for neuromorphic computing
저자
Ju, Dongyeol; Kim, Sungjun
DOI
10.1016/j.isci.2024.110479
발행일
2024-08
유형
Article
저널명
iScience
권
27
호
8
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