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Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films
- Ravikumar, M.;
- Chandramohan, R.;
- Valanarasu, S.;
- Manogowri, R.;
- Kathalingam, A.
Citations
WEB OF SCIENCE
7Citations
SCOPUS
7초록
CdO films were prepared by perfume atomizer technique. The prepared films showed cubic crystal structure. SEM image of the films indicated that there is an increase in grain size with substrate temperature. Optical absorption studies revealed that increase of substrate temperature can improve the absorption property of the films. Optical band gap of the film attained maximum value of 2.36 eV for the temperature at 350 degrees C. I-V characteristics of films have shown an improvement in conductivity of the films with increase of substrate temperature and obtained photocurrent of 4.07 x 10(-4) A for the film coated at 350 degrees C.
키워드
CdO thin film; Coating temperature; p-Si/n-CdO heterojunction X-ray diffraction; Optical properties; Electrical properties; DEPOSITION TEMPERATURE; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; THICKNESS; NANOPARTICLES
- 제목
- Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films
- 저자
- Ravikumar, M.; Chandramohan, R.; Valanarasu, S.; Manogowri, R.; Kathalingam, A.
- 발행일
- 2017-11-02
- 유형
- Article
- 권
- 47
- 호
- 11
- 페이지
- 1495 ~ 1500
- 언어
- ENG
- 출판사
- TAYLOR & FRANCIS INC
- 발행국가
- 미국
- 분량
- 6 페이지
- ISSN
- E 2470-1564
P 2470-1556