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Synaptic characteristics of Bottom- Gated Phototransistors with Indium- Gallium-Zinc-Oxide Active Layers as a function of oxygen partial pressure
- 제목
- Synaptic characteristics of Bottom- Gated Phototransistors with Indium- Gallium-Zinc-Oxide Active Layers as a function of oxygen partial pressure
- 저자
- 정권범
- 발행일
- 2025-05-26
- 학회명
- European Materials Research Society (EMRS)