Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Citations

WEB OF SCIENCE

5
Citations

SCOPUS

6

초록

We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorocl was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NOR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod. (C) 2015 Elsevier B.V. All rights reserved.

키워드

ZnO nanorodLithographyNanoscale devicePlanar deviceMetal-semiconductor contactNegative differential resistance
제목
Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod
저자
Kathalingam, A.Kim, Hyun-SeokKim, Sam-DongPark, Hyung-MooPark, Hyun-Chang
DOI
10.1016/j.physe.2015.06.030
발행일
2015-11
유형
Article
저널명
Physica E: Low-Dimensional Systems and Nanostructures
74
페이지
241 ~ 243