Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

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5
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6

초록

We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorocl was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NOR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod. (C) 2015 Elsevier B.V. All rights reserved.

키워드

ZnO nanorod; Lithography; Nanoscale device; Planar device; Metal-semiconductor contact; Negative differential resistance
제목
Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod
저자
Kathalingam, A.; Kim, Hyun-Seok; Kim, Sam-Dong; Park, Hyung-Moo; Park, Hyun-Chang
DOI
10.1016/j.physe.2015.06.030
발행일
2015-11
유형
Article
저널명
Physica E: Low-Dimensional Systems and Nanostructures
권
74
페이지
241 ~ 243