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Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod
- Kathalingam, A.;
- Kim, Hyun-Seok;
- Kim, Sam-Dong;
- Park, Hyung-Moo;
- Park, Hyun-Chang
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6초록
We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorocl was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NOR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod. (C) 2015 Elsevier B.V. All rights reserved.
키워드
ZnO nanorod; Lithography; Nanoscale device; Planar device; Metal-semiconductor contact; Negative differential resistance
- 제목
- Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod
- 저자
- Kathalingam, A.; Kim, Hyun-Seok; Kim, Sam-Dong; Park, Hyung-Moo; Park, Hyun-Chang
- 발행일
- 2015-11
- 유형
- Article
- 권
- 74
- 페이지
- 241 ~ 243