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초록

We report on the effects of an oxide semiconductor as an electron transport layer (ETL) on a quantum dots light emitting diode (QD-LED). To improve the properties of QD-LED, we optimized the process parameters for the deposition and post-annealing steps of an oxide ETL. When zinc tin oxide (ZTO) was deposited by radio-frequency magnetron sputtering in a gas mixture of argon and oxygen (Ar : O-2 = 2 : 1) and then annealed under 760 Torr O-2 for 10 min, our QD-LED showed improved luminescence characteristics. Additionally, to overcome the problem of non-uniform luminescence, we optimized the concentration and process conditions of colloidal quantum dot materials. Finally, we fabricated QD-LED devices with luminescence of 4,874 cd/m(2) and luminous efficiency of 2.68 cd/A.

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